Sharif, Kazi and Islam, Riazul and Haque, Mahbubul and Biswas, Satyendra and Groza, Voicu and Assaf, Mansour (2017) Low power nMOS based memory cell. [Conference Proceedings]
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Official URL: http://ieeexplore.ieee.org/document/7975598/
Abstract
This research proposed a new type of memory cell designed by using only nMOS transistors. The memory cell consumes less power and also occupies minimum amount of silicon area. The stability of the data during successive read operation and noise margin are in the promising range. Extensive simulation results demonstrate the validity and competency of the proposed cell.
Item Type: | Conference Proceedings |
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Subjects: | T Technology > T Technology (General) |
Divisions: | Faculty of Science, Technology and Environment (FSTE) > School of Engineering and Physics |
Depositing User: | Mansour Assaf |
Date Deposited: | 21 Aug 2017 00:13 |
Last Modified: | 21 Aug 2017 00:13 |
URI: | https://repository.usp.ac.fj/id/eprint/10063 |
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